| PART |
Description |
Maker |
| NX5315EH_06 NX5315EH NX5315EH-AZ NX5315EH06 |
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
|
CEL[California Eastern Labs]
|
| NX8315XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NX6314EH |
1 310 nm InGaAsP MQW-DFB LASER DIODE FOR 1.25 Gb/s FTTH P2P AND 3 Gb/s BTS
|
California Eastern Labs
|
| NX8316XC |
1 310 nm FOR LONG HAUL 2.5 Gb/s InGaAsP MQW-DFB LASER DIODE TOSA
|
Renesas Electronics Corporation
|
| NX7363JB-BC-AZ |
InGaAsP MQW DC-PBH PULSED LASER DIODE MODULE 1 310 nm OTDR APPLICATION
|
California Eastern Laboratories
|
| NDL7605P4D NDL7605P NDL7605P1C NDL7605P1D NDL7605P |
1 310 nm OPTICAL CATV RETURN PATH APPLICATIONS InGaAsP MQW DFB LASER DIODE MODULE WITH ISOLATOR
|
NEC
|
| NX6508GK51 NX6508GH47 NX6508GH51 NX6508GH59 NX6508 |
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1510 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1470 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1590 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1570 nm (typ).
InGaAsP MQW-DFB laser diode for 2.5 Gb/s, CWDM applications. Wavelength 1490 nm (typ).
|
NEC
|
| NDL7408PLD NDL7001 NDL7001L NDL7401P NDL7408P NDL7 |
Low Power 5V RS232 Dual Driver/Receiver with 0.1?μF Capacitors; Package: SO; No of Pins: 16; Temperature Range: -40?°C to 85?°C
1 310 nm InGaAsP STRAINED MQW DC-PBH LASER DIODE COAXIAL MODULE WITH SINGLE MODE FIBER 1 310纳米InGaAsP的应变量子阱的DC -异质结半导体激光器同轴模块与单模光
|
http://
NEC[NEC]
NEC Corp.
NEC, Corp.
|
| NX6410GH NX6410GH-AZ |
1 490 nm Multiple Quantum Well (MQW) structured Distributed Feed-Back (DFB) laser diode with InGaAs monitor PIN-PD.
InGaAsP MQW-DFB LASER DIODE
|
California Eastern Labs
|
| NX6350EP27-AZ |
LASER DIODE 1 270/1 290/1 310/1 330 nm AlGaInAs MQW-DFB LASER DIODE FOR 40GBASE-LR4 APPLICATION
|
California Eastern Labs
|
